Static and Dynamic Characteristics of an Appropriated and Recessed n-GaN/AlGaN/GaN HEMT

The objective of this paper is to simulate static I-V and dynamic characteristics of an appropriated and recessed nGaN/AlxGa1-xN/GaN high electron mobility (HEMT). Using SILVACO TCAD device simulation, and optimized technological parameters; we calculate the drain-source current (IDS) as a function of the drain-source voltage (VDS) for different values of the gatesource voltage (VGS), and the drain-source current (IDS) depending on the gate-source voltage (VGS) for a drain-source voltage (VDS) of 20 V, for various temperatures. Then, we calculate the cut-off frequency and the maximum oscillation frequency for different temperatures. We obtain a high drain-current equal to 60 mA, a low knee voltage (Vknee) of 2 V, a high pinch-off voltage (VGS0) of 53.5 V, a transconductance greater than 600 mS/mm, a cut-off frequency (fT) of about 330 GHz, and a maximum oscillation frequency (fmax) of about 1 THz. Keywords—n-GaN/AlGaN/GaN HEMT, drain-source current (IDS), transconductance (gm), cut-off frequency (fT), maximum oscillation frequency (fmax).